Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.

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Bibtex

@article{f4fb5e87212a4638bb8ebf2d50dfb377,
title = "Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.",
abstract = "We present a noninvasive optical method to determine the local strain in individual semiconductor nanowires. InP nanowires were intentionally bent with an atomic force microscope and variations in the optical phonon frequency along the wires were mapped using Raman spectroscopy. Sections of the nanowires with a high curvature showed significantly broadened phonon lines. These observations together with deformation potential theory show that compressive and tensile strain inside the nanowires is the physical origin of the observed phonon energy variations.",
author = "Jianing Chen and Gabriela Conache and Mats-Erik Pistol and Struan Gray and Magnus Borgstr{\"o}m and Hongxing Xu and Hongqi Xu and Lars Samuelson and Ulf H{\aa}kanson",
year = "2010",
doi = "10.1021/nl904040y",
language = "English",
volume = "10",
pages = "1280--1286",
journal = "Nano Letters",
issn = "1530-6992",
publisher = "The American Chemical Society (ACS)",
number = "4",

}