Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.

Research output: Contribution to journalArticle

Standard

Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy. / Chen, Jianing; Conache, Gabriela; Pistol, Mats-Erik; Gray, Struan; Borgström, Magnus; Xu, Hongxing; Xu, Hongqi; Samuelson, Lars; Håkanson, Ulf.

In: Nano Letters, Vol. 10, No. 4, 2010, p. 1280-1286.

Research output: Contribution to journalArticle

Harvard

APA

CBE

MLA

Vancouver

Author

Chen, Jianing ; Conache, Gabriela ; Pistol, Mats-Erik ; Gray, Struan ; Borgström, Magnus ; Xu, Hongxing ; Xu, Hongqi ; Samuelson, Lars ; Håkanson, Ulf. / Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy. In: Nano Letters. 2010 ; Vol. 10, No. 4. pp. 1280-1286.

RIS

TY - JOUR

T1 - Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.

AU - Chen, Jianing

AU - Conache, Gabriela

AU - Pistol, Mats-Erik

AU - Gray, Struan

AU - Borgström, Magnus

AU - Xu, Hongxing

AU - Xu, Hongqi

AU - Samuelson, Lars

AU - Håkanson, Ulf

PY - 2010

Y1 - 2010

N2 - We present a noninvasive optical method to determine the local strain in individual semiconductor nanowires. InP nanowires were intentionally bent with an atomic force microscope and variations in the optical phonon frequency along the wires were mapped using Raman spectroscopy. Sections of the nanowires with a high curvature showed significantly broadened phonon lines. These observations together with deformation potential theory show that compressive and tensile strain inside the nanowires is the physical origin of the observed phonon energy variations.

AB - We present a noninvasive optical method to determine the local strain in individual semiconductor nanowires. InP nanowires were intentionally bent with an atomic force microscope and variations in the optical phonon frequency along the wires were mapped using Raman spectroscopy. Sections of the nanowires with a high curvature showed significantly broadened phonon lines. These observations together with deformation potential theory show that compressive and tensile strain inside the nanowires is the physical origin of the observed phonon energy variations.

U2 - 10.1021/nl904040y

DO - 10.1021/nl904040y

M3 - Article

C2 - 20192231

VL - 10

SP - 1280

EP - 1286

JO - Nano Letters

JF - Nano Letters

SN - 1530-6992

IS - 4

ER -