Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I60 of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-based prediction of the nanowire TFET technology. At 30 GHz the detector has been simulated to reveal a sensitivity of 4.8 kV/W biased near zero volts (VGS =-0.06 V, VDS = 0.1 V). A maximum sensitivity of over 4000 kV/W has been obtained under biased conditions. These results exceed prior measurements of an In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction TFET by over an order of magnitude.

Details

Authors
Organisations
External organisations
  • University of Notre Dame
  • Norwegian University of Science and Technology
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Other Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • compact model, millimeter-wave detector, SPICE, TFET, tunnel FET
Original languageEnglish
Title of host publication2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
Volume2018-March
ISBN (Electronic)9781538637654
Publication statusPublished - 2018 Mar 7
Publication categoryResearch
Peer-reviewedYes
Event2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 - Burlingame, United States
Duration: 2017 Oct 162017 Oct 18

Conference

Conference2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
CountryUnited States
CityBurlingame
Period2017/10/162017/10/18