Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

Research output: Contribution to journalArticle

Abstract

Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.

Details

Authors
Organisations
External organisations
  • Lund University
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Other Electrical Engineering, Electronic Engineering, Information Engineering
Original languageEnglish
Article number062902
JournalApplied Physics Letters
Volume116
Issue number6
Publication statusPublished - 2020 Feb 10
Publication categoryResearch
Peer-reviewedYes

Related projects

Mattias Borg

Swedish Research Council

2019/01/012023/12/31

Project: Other

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