Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Research output: Contribution to journalArticle


By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au.


Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering


  • image force, silicon carbide, nano-particles, Schottky barrier height, lowering
Original languageEnglish
Pages (from-to)1433-1440
JournalSolid-State Electronics
Issue number9
Publication statusPublished - 2002
Publication categoryResearch