Selective optical doping to predict the performance and reveal the origin of photocurrent peaks in quantum dots-in-a-well infrared photodetectors

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

Resonant optical pumping across the band gap was used as artificial doping in InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well infrared photodetectors. Through efficient filling of the quantum dot energy levels by simultaneous optical pumping into the ground states and the excited states of the quantum dots, the response was increased by a factor of 10. Low temperature photocurrent peaks observed at 120 and 148 meV were identified as intersubband transitions emanating from the quantum dot ground state and the quantum dot excited state, respectively by a selective increase of the electron population in the different quantum dot energy levels. (C) 2009 Elsevier B.V. All rights reserved.

Details

Authors
  • L. Hoglund
  • P. O. Holtz
  • Håkan Pettersson
  • C. Asplund
  • Q. Wang
  • S. Almqvist
  • H. Malm
  • E. Petrini
  • J. Y. Andersson
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics

Keywords

  • Optical pumping, Quantum dot, Detector, Infrared, QDIP, DWELL, Doping
Original languageEnglish
Title of host publicationInfrared Physics & Technology
PublisherElsevier
Pages272-275
Volume52
Publication statusPublished - 2009
Publication categoryResearch
Peer-reviewedYes
EventInternational Conference on Quantum Structure Infrared Photodetector - Yosemite, CA
Duration: 2009 Jan 182009 Jan 23

Publication series

Name
Number6
Volume52
ISSN (Print)1350-4495

Conference

ConferenceInternational Conference on Quantum Structure Infrared Photodetector
Period2009/01/182009/01/23