Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study

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Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study. / Mandl, Bernhard; Dey, Anil; Stangl, Julian; Cantoro, Mirco; Wernersson, Lars-Erik; Bauer, Günther; Samuelson, Lars; Deppert, Knut; Thelander, Claes.

In: Journal of Crystal Growth, Vol. 334, No. 1, 2011, p. 51-56.

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Mandl, Bernhard ; Dey, Anil ; Stangl, Julian ; Cantoro, Mirco ; Wernersson, Lars-Erik ; Bauer, Günther ; Samuelson, Lars ; Deppert, Knut ; Thelander, Claes. / Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study. In: Journal of Crystal Growth. 2011 ; Vol. 334, No. 1. pp. 51-56.

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TY - JOUR

T1 - Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study

AU - Mandl, Bernhard

AU - Dey, Anil

AU - Stangl, Julian

AU - Cantoro, Mirco

AU - Wernersson, Lars-Erik

AU - Bauer, Günther

AU - Samuelson, Lars

AU - Deppert, Knut

AU - Thelander, Claes

PY - 2011

Y1 - 2011

N2 - In this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO2, where openings smaller than 180 nm lead to a substantial decrease in nucleation yield, while openings larger than View the MathML source promote nucleation of crystallites rather than nanowires. We propose that this is a result of indium particle formation prior to nanowire growth, where the size of the indium particles, under constant growth parameters, is strongly influenced by the size of the openings in the SiO2 film. Nanowires overgrowing the etched holes, eventually leading to a merging of neighboring nanowires, shed light into the growth mechanism.

AB - In this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO2, where openings smaller than 180 nm lead to a substantial decrease in nucleation yield, while openings larger than View the MathML source promote nucleation of crystallites rather than nanowires. We propose that this is a result of indium particle formation prior to nanowire growth, where the size of the indium particles, under constant growth parameters, is strongly influenced by the size of the openings in the SiO2 film. Nanowires overgrowing the etched holes, eventually leading to a merging of neighboring nanowires, shed light into the growth mechanism.

KW - Nanostructures

KW - Nanowire growth

KW - Metalorganic vapor phase epitaxy

KW - Semiconductor III–V materials

U2 - 10.1016/j.jcrysgro.2011.08.023

DO - 10.1016/j.jcrysgro.2011.08.023

M3 - Article

C2 - 22053114

VL - 334

SP - 51

EP - 56

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -