Size-effects in indium gallium arsenide nanowire field-effect transistors
Research output: Contribution to journal › Article
We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., VT variability, and on-current, through the mean free path, in the choice of the channel material.
|Research areas and keywords||
Subject classification (UKÄ) – MANDATORY
|Journal||Applied Physics Letters|
|Publication status||Published - 2016 Aug 8|