Size-effects in indium gallium arsenide nanowire field-effect transistors
Research output: Contribution to journal › Article
Abstract
We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., VT variability, and on-current, through the mean free path, in the choice of the channel material.
Details
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Research areas and keywords | Subject classification (UKÄ) – MANDATORY
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Original language | English |
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Article number | 063505 |
Journal | Applied Physics Letters |
Volume | 109 |
Issue number | 6 |
Publication status | Published - 2016 Aug 8 |
Publication category | Research |
Peer-reviewed | Yes |