Spurious solutions and boundary conditions in k center dot p theory

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Standard

Spurious solutions and boundary conditions in k center dot p theory. / Lassen, Benny; Willatzen, M; Melnik, R. N. V.; Lew Yan Voon, L.C.

Physics of Semiconductors, Pts A and B. Vol. 893 American Institute of Physics (AIP), 2007. p. 393-394.

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Harvard

Lassen, B, Willatzen, M, Melnik, RNV & Lew Yan Voon, LC 2007, Spurious solutions and boundary conditions in k center dot p theory. in Physics of Semiconductors, Pts A and B. vol. 893, American Institute of Physics (AIP), pp. 393-394, 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, Austria, 2006/07/24. https://doi.org/10.1063/1.2729931

APA

Lassen, B., Willatzen, M., Melnik, R. N. V., & Lew Yan Voon, L. C. (2007). Spurious solutions and boundary conditions in k center dot p theory. In Physics of Semiconductors, Pts A and B (Vol. 893, pp. 393-394). American Institute of Physics (AIP). https://doi.org/10.1063/1.2729931

CBE

Lassen B, Willatzen M, Melnik RNV, Lew Yan Voon LC. 2007. Spurious solutions and boundary conditions in k center dot p theory. In Physics of Semiconductors, Pts A and B. American Institute of Physics (AIP). pp. 393-394. https://doi.org/10.1063/1.2729931

MLA

Lassen, Benny et al. "Spurious solutions and boundary conditions in k center dot p theory". Physics of Semiconductors, Pts A and B. American Institute of Physics (AIP). 2007, 393-394. https://doi.org/10.1063/1.2729931

Vancouver

Lassen B, Willatzen M, Melnik RNV, Lew Yan Voon LC. Spurious solutions and boundary conditions in k center dot p theory. In Physics of Semiconductors, Pts A and B. Vol. 893. American Institute of Physics (AIP). 2007. p. 393-394 https://doi.org/10.1063/1.2729931

Author

Lassen, Benny ; Willatzen, M ; Melnik, R. N. V. ; Lew Yan Voon, L.C. / Spurious solutions and boundary conditions in k center dot p theory. Physics of Semiconductors, Pts A and B. Vol. 893 American Institute of Physics (AIP), 2007. pp. 393-394

RIS

TY - GEN

T1 - Spurious solutions and boundary conditions in k center dot p theory

AU - Lassen, Benny

AU - Willatzen, M

AU - Melnik, R. N. V.

AU - Lew Yan Voon, L.C.

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Mathematical Physics (Faculty of Technology) (011040002)

PY - 2007

Y1 - 2007

N2 - It is well known that the origin of one type of spurious solutions in multiband k(.)p theory is the failure to restrict the Fourier coefficients of the envelope functions to the first Brillouin zone. Often, the set of differential equations obtained is supplemented with interfacial boundary conditions derived by integrating the differential equations across the interface; however, this leads to a mathematically ill-posed problem as the envelope functions cannot simultaneously fulfill these boundary conditions and the requirement that the Fourier coefficients be restricted to the first Brillouin zone. We show, by way of an example, the origin of these spurious solutions and how to remove them.

AB - It is well known that the origin of one type of spurious solutions in multiband k(.)p theory is the failure to restrict the Fourier coefficients of the envelope functions to the first Brillouin zone. Often, the set of differential equations obtained is supplemented with interfacial boundary conditions derived by integrating the differential equations across the interface; however, this leads to a mathematically ill-posed problem as the envelope functions cannot simultaneously fulfill these boundary conditions and the requirement that the Fourier coefficients be restricted to the first Brillouin zone. We show, by way of an example, the origin of these spurious solutions and how to remove them.

KW - spurious solutions

KW - exact envelope function theory

KW - k center dot p

KW - interfacial boundary conditions

U2 - 10.1063/1.2729931

DO - 10.1063/1.2729931

M3 - Paper in conference proceeding

VL - 893

SP - 393

EP - 394

BT - Physics of Semiconductors, Pts A and B

PB - American Institute of Physics (AIP)

T2 - 28th International Conference on the Physics of Semiconductors (ICPS-28)

Y2 - 24 July 2006 through 28 July 2006

ER -