Stable hydrogen pair trapped at carbon impurities in silicon
Research output: Contribution to journal › Article
Local mode spectroscopy and ab initio modeling are used to investigate two trigonal defects found in carbon rich Si into which H had been in-diffused. Isotopic shifts with D and C-13 are reported along with the effect of uniaxial stress. Ab-initio modeling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed experimentally. The defects are energetically favorable in comparison with separated C-s and H-2 in Si and may represent aggregation sites for hydrogen.
|Research areas and keywords||
Subject classification (UKÄ) – MANDATORY
|Journal||Defect and Diffusion Forum|
|Publication status||Published - 2003|