Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques

Research output: Contribution to journalArticle

Abstract

Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)(B) substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain in homogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.

Details

Authors
  • Joel Eymery
  • Francois Rieutord
  • Vincent Favre-Nicolin
  • Odile Robach
  • Yann-Michel Niquet
  • Linus Fröberg
  • Thomas Mårtensson
  • Lars Samuelson
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology
Original languageEnglish
Pages (from-to)2596-2601
JournalNano Letters
Volume7
Issue number9
Publication statusPublished - 2007
Publication categoryResearch
Peer-reviewedYes