Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam

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Abstract

Strained InGaN/GaN core-shell nanowires (NWs) are promising candidates for solid state lighting applications due to their superior properties compared to planar films. NW based devices consist of multiple functional layers, which sum up to many hundred nanometers in thickness, that can uniquely be accessed in a non-destructive fashion by hard X-rays. Here, we present a detailed nanoscale strain mapping performed on a single, 400 nm thick and 2 lm long core-shell InGaN/GaN nanowire with an x-ray beam focused down to 100 nm. We observe an inhomogeneous strain distribution caused by the asymmetric strain relaxation in the shell. One side of the InGaN shell was fully strained, whereas the other side and the top part were relaxed. Additionally, tilt and strain gradients were determined at the interface with the substrate. (C) 2015 AIP Publishing LLC.

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  • Nano Technology
  • Condensed Matter Physics
Original languageEnglish
Article number103101
JournalApplied Physics Letters
Volume107
Issue number10
Publication statusPublished - 2015
Publication categoryResearch
Peer-reviewedYes