Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam

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Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam. / Stankevic, Tomas; Dzhigaev, Dmitry; Bi, Zhaoxia; Rose, Max; Shabalin, Anatoly; Reinhardt, Juliane; Mikkelsen, Anders; Samuelson, Lars; Falkenberg, Gerald; Vartanyants, Ivan A.; Feidenhans'l, Robert.

In: Applied Physics Letters, Vol. 107, No. 10, 103101, 2015.

Research output: Contribution to journalArticle

Harvard

Stankevic, T, Dzhigaev, D, Bi, Z, Rose, M, Shabalin, A, Reinhardt, J, Mikkelsen, A, Samuelson, L, Falkenberg, G, Vartanyants, IA & Feidenhans'l, R 2015, 'Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam', Applied Physics Letters, vol. 107, no. 10, 103101. https://doi.org/10.1063/1.4929942

APA

Stankevic, T., Dzhigaev, D., Bi, Z., Rose, M., Shabalin, A., Reinhardt, J., ... Feidenhans'l, R. (2015). Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam. Applied Physics Letters, 107(10), [103101]. https://doi.org/10.1063/1.4929942

CBE

Stankevic T, Dzhigaev D, Bi Z, Rose M, Shabalin A, Reinhardt J, Mikkelsen A, Samuelson L, Falkenberg G, Vartanyants IA, Feidenhans'l R. 2015. Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam. Applied Physics Letters. 107(10). https://doi.org/10.1063/1.4929942

MLA

Vancouver

Stankevic T, Dzhigaev D, Bi Z, Rose M, Shabalin A, Reinhardt J et al. Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam. Applied Physics Letters. 2015;107(10). 103101. https://doi.org/10.1063/1.4929942

Author

Stankevic, Tomas ; Dzhigaev, Dmitry ; Bi, Zhaoxia ; Rose, Max ; Shabalin, Anatoly ; Reinhardt, Juliane ; Mikkelsen, Anders ; Samuelson, Lars ; Falkenberg, Gerald ; Vartanyants, Ivan A. ; Feidenhans'l, Robert. / Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam. In: Applied Physics Letters. 2015 ; Vol. 107, No. 10.

RIS

TY - JOUR

T1 - Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam

AU - Stankevic, Tomas

AU - Dzhigaev, Dmitry

AU - Bi, Zhaoxia

AU - Rose, Max

AU - Shabalin, Anatoly

AU - Reinhardt, Juliane

AU - Mikkelsen, Anders

AU - Samuelson, Lars

AU - Falkenberg, Gerald

AU - Vartanyants, Ivan A.

AU - Feidenhans'l, Robert

PY - 2015

Y1 - 2015

N2 - Strained InGaN/GaN core-shell nanowires (NWs) are promising candidates for solid state lighting applications due to their superior properties compared to planar films. NW based devices consist of multiple functional layers, which sum up to many hundred nanometers in thickness, that can uniquely be accessed in a non-destructive fashion by hard X-rays. Here, we present a detailed nanoscale strain mapping performed on a single, 400 nm thick and 2 lm long core-shell InGaN/GaN nanowire with an x-ray beam focused down to 100 nm. We observe an inhomogeneous strain distribution caused by the asymmetric strain relaxation in the shell. One side of the InGaN shell was fully strained, whereas the other side and the top part were relaxed. Additionally, tilt and strain gradients were determined at the interface with the substrate. (C) 2015 AIP Publishing LLC.

AB - Strained InGaN/GaN core-shell nanowires (NWs) are promising candidates for solid state lighting applications due to their superior properties compared to planar films. NW based devices consist of multiple functional layers, which sum up to many hundred nanometers in thickness, that can uniquely be accessed in a non-destructive fashion by hard X-rays. Here, we present a detailed nanoscale strain mapping performed on a single, 400 nm thick and 2 lm long core-shell InGaN/GaN nanowire with an x-ray beam focused down to 100 nm. We observe an inhomogeneous strain distribution caused by the asymmetric strain relaxation in the shell. One side of the InGaN shell was fully strained, whereas the other side and the top part were relaxed. Additionally, tilt and strain gradients were determined at the interface with the substrate. (C) 2015 AIP Publishing LLC.

U2 - 10.1063/1.4929942

DO - 10.1063/1.4929942

M3 - Article

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 103101

ER -