Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

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Abstract

The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.

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  • Nano Technology
Original languageEnglish
Article number015504
JournalNanotechnology
Volume18
Issue number1
Publication statusPublished - 2007
Publication categoryResearch
Peer-reviewedYes

Bibliographic note

The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid Mechanics (011094009), Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)