Structural investigation of GaInP nanowires using X-ray diffraction

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Abstract

In this work the structure of ternary GaxIn1-xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 mu m are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements. (C) 2013 Elsevier B.V. All rights reserved.

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Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics

Keywords

  • Nanowires, X-ray diffraction, III-V semiconductors
Original languageEnglish
Pages (from-to)100-105
JournalThin Solid Films
Volume543
Publication statusPublished - 2013
Publication categoryResearch
Peer-reviewedYes