Structure of amorphous silicon investigated by EXAFS

Research output: Contribution to journalArticle

Abstract

The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose dependent structure of another Group IV semiconductor: a-Ge. Specifically, no ion dose dependence of the a-Si structural parameters were observed. (C) 2002 Elsevier Science B.V. All rights reserved.

Details

Authors
  • Chris Glover
  • GJ Foran
  • MC Ridgway
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Physical Sciences
  • Natural Sciences

Keywords

  • amorphous semiconductors, extended X-ray absorption fine structure, spectroscopy, silicon
Original languageEnglish
Pages (from-to)195-199
JournalNuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume199
Publication statusPublished - 2003
Publication categoryResearch
Peer-reviewedYes