Surface and electronic structure of epitaxial PtLuSb (001) thin films

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Abstract

The surface and electronic structure of single crystal thin films of PtLuSb (001) grown by molecular beam epitaxy were studied. Scanning tunneling spectroscopy (STS), photoemission spectroscopy, and temperature dependent Hall measurements of PtLuSb thin films are consistent with a zero-gap semiconductor or semi-metal. STS and photoemission measurements show a decrease in density of states approaching the Fermi level for both valence and conduction bands as well as a slight shift of the Fermi level position into the valence band. Temperature dependent Hall measurements also corroborate the Fermi level position by measurement of p-type carriers. (C) 2014 AIP Publishing LLC.

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  • Atom and Molecular Physics and Optics
  • Physical Sciences
  • Natural Sciences
Original languageEnglish
Article number201603
JournalApplied Physics Letters
Volume104
Issue number20
Publication statusPublished - 2014
Publication categoryResearch
Peer-reviewedYes