Suspended InAsnanowire gate-all-around field-effect transistors

Research output: Contribution to journalArticle

Abstract

Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I-on of similar to 10 mu A arid an on-off current ratio I-on/I-off of as high as 10(6) at sourcedrain bias voltage of 50 mV and gate length of 1 mu m with a gate underlap spacing of 1 mu m from the source and from the drain. At low temperatures, the on-state current I-on is only slightly reduced, while the ratio I-on/I-off is increased to 10(7). The field-effect mobility in the nanowire channels is also investigated and found to be similar to 1500 cm(2)/V s at room temperature and similar to 2000 cm(2)/V s at low temperatures. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires. (C) 2014 A1P Publishing LLC.

Details

Authors
  • Qiang Li
  • Shaoyun Huang
  • Dong Pan
  • Jingyun Wang
  • Jianhua Zhao
  • Hongqi Xu
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
Original languageEnglish
Article number113106
JournalApplied Physics Letters
Volume105
Issue number11
Publication statusPublished - 2014
Publication categoryResearch
Peer-reviewedYes