Synthesis and Applications of III-V Nanowires

Research output: Contribution to journalReview article

Abstract

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

Details

Authors
Organisations
External organisations
  • Sol Voltaics AB
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
  • Nano Technology
Original languageEnglish
Pages (from-to)9170-9220
Number of pages51
JournalChemical Reviews
Volume119
Issue number15
Publication statusPublished - 2019 Aug 14
Publication categoryResearch
Peer-reviewedYes