Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type GaSb nanowires

Research output: Contribution to journalArticle

Abstract

High-quality GaSb nanowires (NWs) have been synthesized via chemical vapor deposition. The as-synthesized NWs have a zinc-blende structure with growth direction along a < 011 > direction. Raman spectrum of the GaSb NWs consists of two peaks, corresponding to the LO and TO phonon modes, respectively. The temperature dependence of the photoluminescence spectra shows a blue-shift as the temperature decreases from 300 to 13 K. The electrical properties of the GaSb NWs are investigated over a wide range of temperatures from 25 mK to 291 K. The results show that the GaSb NWs exhibit excellent p-type transistor performance at low temperatures (<40 K). The room-temperature hole density and mobility were found to be similar to 2.2 x 10(18) cm(-3) and similar to 14.2 cm(2) V-1 s(-1), respectively. The Schottky contact characteristics were observed and the barrier height was found to be similar to 14 meV. Our results show that the GaSb NWs could be used as building blocks for emerging p-type nanoelectronic devices in extremely low temperature environments.

Details

Authors
  • Guangwei Xu
  • Shaoyun Huang
  • Xiaoye Wang
  • Bin Yu
  • Hui Zhang
  • Tao Yang
  • Hongqi Xu
  • Lun Dai
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Chemical Sciences
Original languageEnglish
Pages (from-to)19834-19839
JournalRSC Advances
Volume3
Issue number43
Publication statusPublished - 2013
Publication categoryResearch
Peer-reviewedYes