Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

InAs/HfO2 nanowire capacitors using capacitance-voltage (CV) measurements are investigated in the range of 10 kHz to 10 MHz. The capacitors are based on vertical nanowire arrays that are coated with an 8 nm-thick HfO2 layer by atomic layer deposition. CV characteristics are measured at temperatures in the range between -140 and 40 degrees C and the CV characteristics for nanowires with different Sn and Se n-type doping levels are compared. The comparison of the data at various doping levels points towards large number of traps for highly doped samples, caused by the preferential dopant precursor incorporation at the nanowire surface. We also evaluate the frequency dispersion of the accumulation capacitance and determine values below 2% with weak temperature dependence, indicating the existence of border traps in these nanowire capacitors. (C) 2010 Elsevier B.V. All rights reserved.

Details

Authors
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • III/V, Nanowire doping, Capacitance-voltage, InAs, Vertical wrap gate
Original languageEnglish
Title of host publicationMicroelectronic Engineering
PublisherElsevier
Pages444-447
Volume88
Publication statusPublished - 2011
Publication categoryResearch
Peer-reviewedYes
EventEMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials - Strasbourg, France
Duration: 2010 Jun 72010 Jun 11

Publication series

Name
Number4
Volume88
ISSN (Print)0167-9317
ISSN (Electronic)1873-5568

Conference

ConferenceEMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials
CountryFrance
CityStrasbourg
Period2010/06/072010/06/11