The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire

Research output: Contribution to journalArticle

Abstract

Understanding piezotronic correlated carrier recombination behavior in quantum wells is essential for their applications. In this work, we have studied the influence of piezotronics on carrier recombination processes in single InGaN/GaN multiple quantum wells microwire (MQW-MW) by using steady-state and time-resolved spectroscopies. We conclude that mechanical strain induced piezotronics promotes the charge separation of excitons in space, and slows down the recombination rate of free carriers. The proposed model is supported by three independent experiments: photoluminescence experiment of MQW-MW before and after peel off, strain dependent TRPL experiment, and excitation fluency dependent PL intensity experiment. Our study could provide a guideline for the application of piezotronic in MQW-MW-based optoelectronic devices.

Details

Authors
Organisations
External organisations
  • Guangzhou University
  • South China Normal University
  • Guangdong Academy of Sciences
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics

Keywords

  • Carrier dynamics, Charge trapping, InGaN/GaN MQWs, Microwires, Piezotronic effect, Time-resolved spectroscopy
Original languageEnglish
Article number106145
JournalNano Energy
Volume87
Publication statusPublished - 2021 Sep 1
Publication categoryResearch
Peer-reviewedYes