The region ion sensitive field effect transistor, a novel bioelectronic nanosensor

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The region ion sensitive field effect transistor, a novel bioelectronic nanosensor. / Risveden, Klas; Pontén, Fredrik; Calander, N.; Willander, M.; Danielsson, Bengt.

In: Biosensors & Bioelectronics, Vol. 22, No. 12, 2007, p. 3105-3112.

Research output: Contribution to journalArticle

Harvard

Risveden, K, Pontén, F, Calander, N, Willander, M & Danielsson, B 2007, 'The region ion sensitive field effect transistor, a novel bioelectronic nanosensor', Biosensors & Bioelectronics, vol. 22, no. 12, pp. 3105-3112. https://doi.org/10.1016/j.bios.2007.01.019

APA

Risveden, K., Pontén, F., Calander, N., Willander, M., & Danielsson, B. (2007). The region ion sensitive field effect transistor, a novel bioelectronic nanosensor. Biosensors & Bioelectronics, 22(12), 3105-3112. https://doi.org/10.1016/j.bios.2007.01.019

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Risveden, Klas ; Pontén, Fredrik ; Calander, N. ; Willander, M. ; Danielsson, Bengt. / The region ion sensitive field effect transistor, a novel bioelectronic nanosensor. In: Biosensors & Bioelectronics. 2007 ; Vol. 22, No. 12. pp. 3105-3112.

RIS

TY - JOUR

T1 - The region ion sensitive field effect transistor, a novel bioelectronic nanosensor

AU - Risveden, Klas

AU - Pontén, Fredrik

AU - Calander, N.

AU - Willander, M.

AU - Danielsson, Bengt

PY - 2007

Y1 - 2007

N2 - A novel type of bioelectronic region ion sensitive field effect transistor (RISFET) nanosensor was constructed and demonstrated on two different sensor chips that could measure glucose with good linearity in the range of 0-0.6 mM and 0-0.3 mM with a limit of detection of 0.1 and 0.04 mM, respectively. The sensor is based on the principle of focusing charged reaction products with an electrical field in a region between the sensing electrodes. For glucose measurements, negatively charged gluconate ions were gathered between the sensing electrodes. The signal current response was measured using a low-noise pico ammeter (pA). Two different sizes of the RISFET sensor chips were constructed using conventional electron beam lithography. The measurements are done in partial volumes mainly restricted by the working distance between the sensing electrodes (790 and 2500 nm, respectively) and the influence of electrical fields that are concentrating the ions. The sensitivity was 28 pA/mM (2500 nm) and 830 pA/mM (790 nm), respectively. That is an increase in field strength by five times between the sensing electrodes increased the sensitivity by 30 times. The volumes expressed in this way are in low or sub femtoliter range. Preliminary studies revealed that with suitable modification and control of parameters such as the electric control signals and the chip electrode dimensions this sensor could also be used as a nanobiosensor by applying single enzyme molecule trapping. Hypotheses are given for impedance factors of the RISFET conducting channel.

AB - A novel type of bioelectronic region ion sensitive field effect transistor (RISFET) nanosensor was constructed and demonstrated on two different sensor chips that could measure glucose with good linearity in the range of 0-0.6 mM and 0-0.3 mM with a limit of detection of 0.1 and 0.04 mM, respectively. The sensor is based on the principle of focusing charged reaction products with an electrical field in a region between the sensing electrodes. For glucose measurements, negatively charged gluconate ions were gathered between the sensing electrodes. The signal current response was measured using a low-noise pico ammeter (pA). Two different sizes of the RISFET sensor chips were constructed using conventional electron beam lithography. The measurements are done in partial volumes mainly restricted by the working distance between the sensing electrodes (790 and 2500 nm, respectively) and the influence of electrical fields that are concentrating the ions. The sensitivity was 28 pA/mM (2500 nm) and 830 pA/mM (790 nm), respectively. That is an increase in field strength by five times between the sensing electrodes increased the sensitivity by 30 times. The volumes expressed in this way are in low or sub femtoliter range. Preliminary studies revealed that with suitable modification and control of parameters such as the electric control signals and the chip electrode dimensions this sensor could also be used as a nanobiosensor by applying single enzyme molecule trapping. Hypotheses are given for impedance factors of the RISFET conducting channel.

KW - electron beam lithography

KW - nanosensor

KW - nanostructures

KW - microscopy

KW - atomic force

U2 - 10.1016/j.bios.2007.01.019

DO - 10.1016/j.bios.2007.01.019

M3 - Article

VL - 22

SP - 3105

EP - 3112

JO - Biosensors and Bioelectronics

JF - Biosensors and Bioelectronics

SN - 0956-5663

IS - 12

ER -