Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing

Research output: Contribution to journalArticle

Abstract

The redistribution of Mn atoms in Ga1-xMnxAs layer during medium-temperature annealing, 250-450 oC, by Mn K-edge X-ray absorption fine structure (XAFS) recorded at ALBA facility, was studied. For this purpose Ga1-xMnxAs thin layer with x=0.01 was grown on AlAs buffer layer deposited on GaAs(100) substrate by molecular beam epitaxy (MBE) followed by annealing. The examined layer was detached from the substrate using a "lift-off" procedure in order to eliminate elastic scattering in XAFS spectra. Fourier transform analysis of experimentally obtained EXAFS spectra allowed to propose a model which describes a redistribution/diffusion of Mn atoms in the host matrix. Theoretical XANES spectra, simulated using multiple scattering formalism (FEFF code) with the support of density functional theory (WIEN2k code), qualitatively describe the features observed in the experimental fine structure.

Details

Authors
  • Y. Melikhov
  • P. Konstantynov
  • J. Domagala
  • J. Sadowski
  • M. Chernyshova
  • T Wojciechowski
  • Y. Syryanyy
  • I. N. Demchenko
Organisations
External organisations
  • Institute of Physics PAS
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Fusion, Plasma and Space Physics
Original languageEnglish
Article number012114
JournalJournal of Physics: Conference Series
Volume712
Issue number1
Publication statusPublished - 2016
Publication categoryResearch
Peer-reviewedYes