Three-dimensional integrated resonant tunneling transistor with multiple peaks
Research output: Contribution to journal › Article
A resonant tunneling transistor was manufactured by integrating a self-aligned metallic gate 30 nm above and 100 nm below resonant tunneling diodes. The Schottky depletion around the gate controls the current to a confined vertical channel with a conduction area in the range of 100x100 nm. Due to the three-dimensional asymmetric placement of the gate with respect to the tunneling diodes, modulation of both the peak voltage and peak current was achieved.
|Research areas and keywords||
Subject classification (UKÄ)
|Journal||Applied Physics Letters|
|Publication status||Published - 2002|