Three-dimensional integrated resonant tunneling transistor with multiple peaks

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Abstract

A resonant tunneling transistor was manufactured by integrating a self-aligned metallic gate 30 nm above and 100 nm below resonant tunneling diodes. The Schottky depletion around the gate controls the current to a confined vertical channel with a conduction area in the range of 100x100 nm. Due to the three-dimensional asymmetric placement of the gate with respect to the tunneling diodes, modulation of both the peak voltage and peak current was achieved.

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Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics
Original languageEnglish
Pages (from-to)1905-1907
JournalApplied Physics Letters
Volume81
Issue number10
Publication statusPublished - 2002
Publication categoryResearch
Peer-reviewedYes