Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions

Research output: Contribution to journalArticle

Abstract

Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on (111)B GaAs. The tilted direction is predominantly the result of a three-dimensional twinning phenomenon at the initial stages of growth, so far only observed in VLS growth. We also find some nanowires growing in ⟨112⟩ and other directions. We further demonstrate how the tilting of nanowires can be engineered by modifying the growth conditions, and outline the procedures to achieve fully vertical or tilted nanowire ensembles. Conditions leading to a high density of tilted nanowires also provide a way to grow nanoscale crosses. This work opens the path toward achieving control over nanowire structures and related hierarchical structures.

Details

Authors
  • Heidi Potts
  • Youri Van Hees
  • Gözde Tütüncüoglu
  • Martin Friedl
  • Jean-baptiste Leran
  • Anna Fontcuberta I Morral
External organisations
  • Swiss Federal Institute of Technology
  • Eindhoven University of Technology
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology
Original languageEnglish
Pages (from-to)3596-3605
JournalCrystal Growth & Design
Volume17
Issue number7
Publication statusPublished - 2017 Jul 5
Publication categoryResearch
Peer-reviewedYes
Externally publishedYes