Transient studies on InAs/HfO2 nanowire capacitors

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Abstract

Single-shot transients and deep-level transient spectroscopy are used to investigate the origins of capacitance hysteresis in n-doped InAs nanowire/HfO2 capacitors. Capacitance transients with a characteristic time in the order of 100 mu s are attributed to emission from electron traps, located in the oxide film. The trap energy is determined to be in the range from 0.12 to 0.17 eV with capture cross-sections of about 1.7 x 10(-17) cm(-2). The capture is measured to be shorter than 100 ns with no sign of capture barrier. Under the reverse bias, the transients show a reduced emission rate indicating a minority carrier assisted complex dynamics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533379]

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Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering
Original languageEnglish
Article number013501
JournalApplied Physics Letters
Volume98
Issue number1
Publication statusPublished - 2011
Publication categoryResearch
Peer-reviewedYes