Transient studies on InAs/HfO2 nanowire capacitors

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Transient studies on InAs/HfO2 nanowire capacitors. / Astromskas, Gvidas; Storm, Kristian; Wernersson, Lars-Erik.

In: Applied Physics Letters, Vol. 98, No. 1, 013501, 2011.

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Astromskas, Gvidas ; Storm, Kristian ; Wernersson, Lars-Erik. / Transient studies on InAs/HfO2 nanowire capacitors. In: Applied Physics Letters. 2011 ; Vol. 98, No. 1.

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TY - JOUR

T1 - Transient studies on InAs/HfO2 nanowire capacitors

AU - Astromskas, Gvidas

AU - Storm, Kristian

AU - Wernersson, Lars-Erik

PY - 2011

Y1 - 2011

N2 - Single-shot transients and deep-level transient spectroscopy are used to investigate the origins of capacitance hysteresis in n-doped InAs nanowire/HfO2 capacitors. Capacitance transients with a characteristic time in the order of 100 mu s are attributed to emission from electron traps, located in the oxide film. The trap energy is determined to be in the range from 0.12 to 0.17 eV with capture cross-sections of about 1.7 x 10(-17) cm(-2). The capture is measured to be shorter than 100 ns with no sign of capture barrier. Under the reverse bias, the transients show a reduced emission rate indicating a minority carrier assisted complex dynamics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533379]

AB - Single-shot transients and deep-level transient spectroscopy are used to investigate the origins of capacitance hysteresis in n-doped InAs nanowire/HfO2 capacitors. Capacitance transients with a characteristic time in the order of 100 mu s are attributed to emission from electron traps, located in the oxide film. The trap energy is determined to be in the range from 0.12 to 0.17 eV with capture cross-sections of about 1.7 x 10(-17) cm(-2). The capture is measured to be shorter than 100 ns with no sign of capture barrier. Under the reverse bias, the transients show a reduced emission rate indicating a minority carrier assisted complex dynamics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533379]

U2 - 10.1063/1.3533379

DO - 10.1063/1.3533379

M3 - Article

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

M1 - 013501

ER -