Tuning the morphology of self-assisted GaP nanowires

Research output: Contribution to journalArticle


Patterned arrays of self-assisted GaP nanowires (NWs) were grown on a Si substrate by gas source molecular beam epitaxy using various V/III flux ratios from 1-6, and various pitches from 360-1000 nm. As the V/III flux ratio was increased from 1-6, the NWs showed a change in morphology from outward tapering to straight, and eventually to inward tapering. The morphologies of the self-assisted GaP NWs are well described by a simple kinetic equation for the NW radius versus the position along the NW axis. The most important growth parameter that governs the NW morphology is the V/III flux ratio. Sharpened NWs with a stable radius equal to only 12 nm at a V/III flux of 6 were achieved, demonstrating their suitability for the insertion of quantum dots.


External organisations
  • National Research University of Information Technologies
  • McMaster University
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology


  • GaP nanowires, growth modeling, morphology
Original languageEnglish
Article number225603
Issue number22
Publication statusPublished - 2018 Mar 29
Publication categoryResearch