Two mm-Wave VCOs in 28-nm UTBB FD-SOI CMOS

Research output: Contribution to journalLetter

Abstract

Two 60-GHz band voltage controlled oscillators (VCOs) designed in a 28-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) CMOS process are demonstrated and compared. Both VCOs have identical cross-coupled nMOS cores and dissipate 3.15 mW from a 0.9-V supply. The first design uses a standard FET current source and achieves a figure of merit (FOM) of −181 dBc/Hz, whereas the second employs a filtered current source and achieves a state-of-the-art FOM of −187 dBc/Hz. The achieved 6-dB improvement demonstrates the efficiency of the filtering technique at millimeter wave frequencies and the feasibility of efficient low-phase noise designs in 28-nm UTBB FD-SOI CMOS. The active area of the filtered VCO is
90μm×180μm and the standard VCO has an area of 80μm×110μm.

Details

Authors
Organisations
External organisations
  • Mellanox Technologies Ltd
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Other Electrical Engineering, Electronic Engineering, Information Engineering
Original languageEnglish
Pages (from-to)509-511
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume27
Issue number5
Publication statusPublished - 2017 Apr 19
Publication categoryResearch
Peer-reviewedYes

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