Ultrafast opto-terahertz photonic crystal modulator

Research output: Contribution to journalArticle

Abstract

We present an agile optically controlled switch or modulator of terahertz (THz) radiation. The element is based on a one-dimensional photonic crystal with a GaAs wafer inserted in the middle as a defect layer. The THz electric field is enhanced in the photonic structure at the surfaces of the Ga-As wafer. Excitation of the front GaAs surface by ultrashort 8 10 nm laser pulses then leads to an efficient modulation of the THz beam even at low photocarrier concentrations (approximate to 10(16) cm(-3)). The response time of the element to pulsed photoexcitation is about 130 ps. (c) 2007 Optical Society of America.

Details

Authors
  • L Fekete
  • F Kadlec
  • P Kuzel
  • Hynek Nemec
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Atom and Molecular Physics and Optics
Original languageEnglish
Pages (from-to)680-682
JournalOptics Letters
Volume32
Issue number6
Publication statusPublished - 2007
Publication categoryResearch
Peer-reviewedYes

Bibliographic note

The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060)