Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

Research output: Contribution to journalArticle

Abstract

The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tend to strech the distances of atomic layers parallel to the c-axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell.

Details

Authors
  • Dominik Kriegner
  • Christian Panse
  • Bernhard Mandl
  • Kimberly Dick Thelander
  • Mario Keplinger
  • Johan M. Persson
  • Philippe Caroff
  • Daniele Ercolani
  • Lucia Sorba
  • Friedhelm Bechstedt
  • Julian Stangl
  • Guenther Bauer
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology

Keywords

  • Nanowires, polytypes, crystal structure, X-ray diffraction, density, functional theory
Original languageEnglish
Pages (from-to)1483-1489
JournalNano Letters
Volume11
Issue number4
Publication statusPublished - 2011
Publication categoryResearch
Peer-reviewedYes