Vertical "III-V" V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering

Research output: Contribution to journalArticle


We report on a new form of III-IV compound semiconductor nanostructures growing epitaxially as vertical V-shaped nanomembranes on Si(001) and study their light-scattering properties. Precise position control of the InAs nanostructures in regular arrays is demonstrated by bottom-up synthesis using molecular beam epitaxy in nanoscale apertures on a SiO2 mask. The InAs V-shaped nanomembranes are found to originate from the two opposite facets of a rectangular pyramidal island nucleus and extend along two opposite < 111 > B directions, forming flat {110} walls. Dark-field scattering experiments, in combination with light-scattering theory, show the presence of distinctive shape-dependent optical resonances significantly enhancing the local intensity of incident electromagnetic fields over tunable spectral regions. These new nanostructures could have interesting potential in nanosensors, infrared light emitters, and nonlinear optical elements.


  • Sonia Conesa-Boj
  • Eleonora Russo-Averchi
  • Anna Dalmau-Mallorqui
  • Jacob Trevino
  • Emanuele F. Pecora
  • Carlo Forestiere
  • Alex Handin
  • Martin Ek
  • Ludovit Zweifel
  • Reine Wallenberg
  • Daniel Rueffer
  • Martin Heiss
  • David Troadec
  • Luca Dal Negro
  • Philippe Caroff
  • Anna Fontcuberta i Morral
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology


  • III-V nanostructures, nanomembranes, V-shape, nucleation, light, scattering
Original languageEnglish
Pages (from-to)10982-10991
JournalACS Nano
Issue number12
Publication statusPublished - 2012
Publication categoryResearch

Bibliographic note

The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041)