Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si

Research output: Contribution to journalArticle


III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.


External organisations
  • University of California, Santa Barbara
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Other Electrical Engineering, Electronic Engineering, Information Engineering
  • Nano Technology


  • heterostructure, InAs, InGaAs, MOSFETs, nanowire, vapor-liquid-solid
Original languageEnglish
Pages (from-to)6006-6010
Number of pages5
JournalNano Letters
Issue number10
Publication statusPublished - 2017 Oct 11
Publication categoryResearch

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