Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si

Research output: Contribution to journalArticle

Bibtex

@article{47aa0120d45a4cadbdcad69eff653827,
title = "Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si",
abstract = "III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.",
keywords = "heterostructure, InAs, InGaAs, MOSFETs, nanowire, vapor-liquid-solid",
author = "Kilpi, {Olli Pekka} and Johannes Svensson and Jun Wu and Persson, {Axel R.} and Reine Wallenberg and Erik Lind and Wernersson, {Lars Erik}",
year = "2017",
month = "10",
day = "11",
doi = "10.1021/acs.nanolett.7b02251",
language = "English",
volume = "17",
pages = "6006--6010",
journal = "Nano Letters",
issn = "1530-6992",
publisher = "The American Chemical Society (ACS)",
number = "10",

}