Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si

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T1 - Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si

AU - Kilpi, Olli Pekka

AU - Svensson, Johannes

AU - Wu, Jun

AU - Persson, Axel R.

AU - Wallenberg, Reine

AU - Lind, Erik

AU - Wernersson, Lars Erik

PY - 2017/10/11

Y1 - 2017/10/11

N2 - III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.

AB - III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.

KW - heterostructure

KW - InAs

KW - InGaAs

KW - MOSFETs

KW - nanowire

KW - vapor-liquid-solid

U2 - 10.1021/acs.nanolett.7b02251

DO - 10.1021/acs.nanolett.7b02251

M3 - Article

VL - 17

SP - 6006

EP - 6010

JO - Nano Letters

T2 - Nano Letters

JF - Nano Letters

SN - 1530-6992

IS - 10

ER -