Weyl Semi-Metal-Based High-Frequency Amplifiers

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

In this work, we propose and simulate a novel amplifier based on Weyl semi-metals, e.g. WP2 and MoP2. These topological materials have been shown to exhibit extremely large magnetoresistance at cryogenic conditions. In the proposed device, a gate current induces a local magnetic field which controls the resistivity of the Weyl semi-metal channel and the resulting output current. Simulations of the magnetic fields are performed to optimize the device design, as well as thermal modeling to determine self-heating effects. Device operation is simulated using an analytical 3D model of magnetic fields and resistivity, and a small-signal model. Results show that the proposed device can provide high gain (20-30 dB) with extremely low DC power dissipation (40 μW) and high transition frequencies. This type of device is promising to replace HEMTs in quantum computers, where the low power dissipation enables it to be integrated at lower cryostat temperature stages.

Details

Authors
  • A. Toniato
  • B. Gotsmann
  • E. Lind
  • C. B. Zota
Organisations
External organisations
  • IBM Research Zurich
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Other Electrical Engineering, Electronic Engineering, Information Engineering
Original languageEnglish
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728140315
ISBN (Print)978-1-7281-4033-9
Publication statusPublished - 2020 Feb 13
Publication categoryResearch
Peer-reviewedYes
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: 2019 Dec 72019 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN (Print)0163-1918
ISSN (Electronic)2156-017X

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
CountryUnited States
CitySan Francisco
Period2019/12/072019/12/11