Weyl Semi-Metal-Based High-Frequency Amplifiers

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Standard

Weyl Semi-Metal-Based High-Frequency Amplifiers. / Toniato, A.; Gotsmann, B.; Lind, E.; Zota, C. B.

2019 IEEE International Electron Devices Meeting, IEDM . Institute of Electrical and Electronics Engineers Inc., 2020. 8993575 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Harvard

Toniato, A, Gotsmann, B, Lind, E & Zota, CB 2020, Weyl Semi-Metal-Based High-Frequency Amplifiers. in 2019 IEEE International Electron Devices Meeting, IEDM ., 8993575, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 2019/12/07. https://doi.org/10.1109/IEDM19573.2019.8993575

APA

Toniato, A., Gotsmann, B., Lind, E., & Zota, C. B. (2020). Weyl Semi-Metal-Based High-Frequency Amplifiers. In 2019 IEEE International Electron Devices Meeting, IEDM [8993575] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993575

CBE

Toniato A, Gotsmann B, Lind E, Zota CB. 2020. Weyl Semi-Metal-Based High-Frequency Amplifiers. In 2019 IEEE International Electron Devices Meeting, IEDM . Institute of Electrical and Electronics Engineers Inc. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM19573.2019.8993575

MLA

Toniato, A. et al. "Weyl Semi-Metal-Based High-Frequency Amplifiers". 2019 IEEE International Electron Devices Meeting, IEDM . Technical Digest - International Electron Devices Meeting, IEDM. Institute of Electrical and Electronics Engineers Inc. 2020. https://doi.org/10.1109/IEDM19573.2019.8993575

Vancouver

Toniato A, Gotsmann B, Lind E, Zota CB. Weyl Semi-Metal-Based High-Frequency Amplifiers. In 2019 IEEE International Electron Devices Meeting, IEDM . Institute of Electrical and Electronics Engineers Inc. 2020. 8993575. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM19573.2019.8993575

Author

Toniato, A. ; Gotsmann, B. ; Lind, E. ; Zota, C. B. / Weyl Semi-Metal-Based High-Frequency Amplifiers. 2019 IEEE International Electron Devices Meeting, IEDM . Institute of Electrical and Electronics Engineers Inc., 2020. (Technical Digest - International Electron Devices Meeting, IEDM).

RIS

TY - GEN

T1 - Weyl Semi-Metal-Based High-Frequency Amplifiers

AU - Toniato, A.

AU - Gotsmann, B.

AU - Lind, E.

AU - Zota, C. B.

PY - 2020/2/13

Y1 - 2020/2/13

N2 - In this work, we propose and simulate a novel amplifier based on Weyl semi-metals, e.g. WP2 and MoP2. These topological materials have been shown to exhibit extremely large magnetoresistance at cryogenic conditions. In the proposed device, a gate current induces a local magnetic field which controls the resistivity of the Weyl semi-metal channel and the resulting output current. Simulations of the magnetic fields are performed to optimize the device design, as well as thermal modeling to determine self-heating effects. Device operation is simulated using an analytical 3D model of magnetic fields and resistivity, and a small-signal model. Results show that the proposed device can provide high gain (20-30 dB) with extremely low DC power dissipation (40 μW) and high transition frequencies. This type of device is promising to replace HEMTs in quantum computers, where the low power dissipation enables it to be integrated at lower cryostat temperature stages.

AB - In this work, we propose and simulate a novel amplifier based on Weyl semi-metals, e.g. WP2 and MoP2. These topological materials have been shown to exhibit extremely large magnetoresistance at cryogenic conditions. In the proposed device, a gate current induces a local magnetic field which controls the resistivity of the Weyl semi-metal channel and the resulting output current. Simulations of the magnetic fields are performed to optimize the device design, as well as thermal modeling to determine self-heating effects. Device operation is simulated using an analytical 3D model of magnetic fields and resistivity, and a small-signal model. Results show that the proposed device can provide high gain (20-30 dB) with extremely low DC power dissipation (40 μW) and high transition frequencies. This type of device is promising to replace HEMTs in quantum computers, where the low power dissipation enables it to be integrated at lower cryostat temperature stages.

UR - http://www.scopus.com/inward/record.url?scp=85081051149&partnerID=8YFLogxK

U2 - 10.1109/IEDM19573.2019.8993575

DO - 10.1109/IEDM19573.2019.8993575

M3 - Paper in conference proceeding

SN - 978-1-7281-4033-9

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2019 IEEE International Electron Devices Meeting, IEDM

PB - Institute of Electrical and Electronics Engineers Inc.

ER -