Applied Physics Letters, 0003-6951

Tidskrift

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  1. Diagnostic of laser contrast using target reflectivity

    A. S. Pirozhkov, I. W. Choi, J. H. Sung, S. K. Lee, T. J. Yu, T. M. Jeong, I. J. Kim, N. Hafz, C. M. Kim, K. H. Pae, Y. -C. Noh, D. -K. Ko, J. Lee, A. P. L. Robinson, P. Foster, S. Hawkes, M. Streeter, C. Spindloe, P. McKenna, D. C. Carroll & 34 andra, Claes-Göran Wahlström, M. Zepf, D. Adams, B. Dromey, K. Markey, S. Kar, Y. T. Li, M. H. Xu, H. Nagatomo, M. Mori, A. Yogo, H. Kiriyama, K. Ogura, A. Sagisaka, S. Orimo, M. Nishiuchi, H. Sugiyama, T. Zh. Esirkepov, H. Okada, S. Kondo, S. Kanazawa, Y. Nakai, A. Akutsu, T. Motomura, M. Tanoue, T. Shimomura, M. Ikegami, I. Daito, M. Kando, T. Kameshima, P. Bolton, S. V. Bulanov, H. Daido & D. Neely, 2009, I: Applied Physics Letters. 94, 24, 241102.

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  2. Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

    S. Plissard, Kimberly Dick Thelander, X. Wallart & P. Caroff, 2010, I: Applied Physics Letters. 96, 12, 121901.

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  3. Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon

    Craig M. Polley, Warrick R. Clarke, Jill A. Miwa, Michelle Y. Simmons & Justin Wells, 2012, I: Applied Physics Letters. 101, 26, 262105.

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  4. Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

    Galia Pozina, Rafal Ciechonski, Zhaoxia Bi, Lars Samuelson & Bo Monemar, 2015 dec 21, I: Applied Physics Letters. 107, 25, 251106.

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  5. Thickness dependent magnetic properties of (Ga,Mn) As ultrathin films

    O. Proselkov, D. Sztenkiel, W. Stefanowicz, M. Aleszkiewicz, Janusz Sadowski, T. Dietl & M. Sawicki, 2012, I: Applied Physics Letters. 100, 26, 262405.

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  6. Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy

    C. Riedl, Alexei Zakharov & U. Starke, 2008, I: Applied Physics Letters. 93, 3, 033106.

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  7. InAs nanowire metal-oxide-semiconductor capacitors

    Stefano Roddaro, Kristian Storm, Gvidas Astromskas, Lars Samuelson, Lars-Erik Wernersson, Olov Karlström & Andreas Wacker, 2008, I: Applied Physics Letters. 92, 25, 253509.

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  8. Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric

    Guntrade Roll, Jiongjiong Mo, Erik Lind, Sofia Johansson & Lars-Erik Wernersson, 2015, I: Applied Physics Letters. 106, 20, 203503.

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  9. Debris-free Single-line Laser-plasma X-ray Source For Microscopy

    L Rymell, M Berglund & H. M Hertz, 1995, I: Applied Physics Letters. 66, 20, s. 2625-2627

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  10. Growth of ultrathin ZrO2 films on Si(100): Film-thickness-dependent band alignment

    A Sandell, PG Karlsson, JH Richter, Jakob Blomquist, Per Uvdal & TM Grehk, 2006, I: Applied Physics Letters. 88, 13

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  11. Oxidation and reduction behavior of Ge/Si islands

    T Sass, Vilma Zela, Anders Gustafsson, I Pietzonka & Werner Seifert, 2002, I: Applied Physics Letters. 81, 18, s. 3455-3457

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  12. High-resolution superconducting single-flux quantum comparator for sub-Kelvin temperatures

    A. M. Savin, J. P. Pekola, T. Holmqvist, Jessica C. Hassel, L. Grönberg, P. Helistö & A. Kidiyarova-Shevchenko, 2006, I: Applied Physics Letters. 89, 13, 133505.

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  13. Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si

    H. Schmid, Mattias Borg, K. Moselund, L. Gignac, C. M. Breslin, J. Bruley, D. Cutaia & H. Riel, 2015 jun 8, I: Applied Physics Letters. 106, 23, 233101.

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  14. Electronic structure of Li-inserted V6O13 battery cathodes: Rigid band behavior and effects of hybridization

    Thorsten Schmitt, A Augustsson, J Nordgren, L C Duda, J Howing, T Gustafsson, U Schwingenschlogl & V Eyert, 2005, I: Applied Physics Letters. 86, 6

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  15. Experimental investigation of picosecond dynamics following interactions between laser accelerated protons and water

    Lovisa Senje, M Coughlan, D Jung, M Taylor, G Nersisyan, D Riley, C.L.S. Lewis, Olle Lundh, Claes-Göran Wahlström, M Zepf & B Dromey, 2017, I: Applied Physics Letters. 110

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  16. Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells

    X. -J. Shang, J. -F. He, M. -F. Li, F. Zhan, H. -Q. Ni, Z. -C. Niu, Hans Pettersson & Y. Fu, 2011, I: Applied Physics Letters. 99, 11, 113514.

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  17. A structure of CdS/CuxS quantum dots sensitized solar cells

    Ting Shen, Lu Bian, Bo Li, Kaibo Zheng, Tönu Pullerits & Jianjun Tian, 2016 maj 23, I: Applied Physics Letters. 108, 21, 213901.

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  18. ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

    Aein Shiri Babadi, Erik Lind & Lars Erik Wernersson, 2016 mar 28, I: Applied Physics Letters. 108, 13, 132904.

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  19. Tunable nonlinear current-voltage characteristics of three-terminal ballistic nanojunctions

    Ivan Shorubalko, Hongqi Xu, Pär Omling & Lars Samuelson, 2003, I: Applied Physics Letters. 83, 12, s. 2369-2371

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  20. Mobility of near surface MOVPE grown InGaAs/InP quantum wells

    Lasse Södergren, Navya Sri Garigapati, Mattias Borg & Erik Lind, 2020 jul 6, I: Applied Physics Letters. 117, 1, 013102.

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  21. Temporal correlation scheme for spectroscopic gas analysis using multimode diode lasers

    Gabriel Somesfalean, Mikael Sjöholm, Linda Persson, H Gao, Tomas Svensson & Sune Svanberg, 2005, I: Applied Physics Letters. 86, 18

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  22. Nanometer-scale two-terminal semiconductor memory operating at room temperature

    Aimin Song, M Missous, Pär Omling, Ivan Maximov, Werner Seifert & Lars Samuelson, 2005, I: Applied Physics Letters. 86, 4, 042106.

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  23. Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

    Aimin Song, M Missous, Pär Omling, AR Peaker, Lars Samuelson & Werner Seifert, 2003, I: Applied Physics Letters. 83, 9, s. 1881-1883

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  24. Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

    BS Sorensen, PE Lindelof, Janusz Sadowski, R Mathieu & P Svedlindh, 2003, I: Applied Physics Letters. 82, 14, s. 2287-2289

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  25. Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam

    Tomas Stankevic, Dmitry Dzhigaev, Zhaoxia Bi, Max Rose, Anatoly Shabalin, Juliane Reinhardt, Anders Mikkelsen, Lars Samuelson, Gerald Falkenberg, Ivan A. Vartanyants & Robert Feidenhans'l, 2015, I: Applied Physics Letters. 107, 10, 103101.

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  26. Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric

    Jie Sun, Marcus Larsson, Ivan Maximov & Hongqi Xu, 2010, I: Applied Physics Letters. 96, 16

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  27. A sequential logic device realized by integration of in-plane gate transistors in InGaAs/InP

    Jie Sun, Daniel Wallin, Yuhui He, Ivan Maximov & Hongqi Xu, 2008, I: Applied Physics Letters. 92, 1, 012116.

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  28. Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

    Jie Sun, Marcus Larsson, Ivan Maximov, Hilde Hardtdegen & Hongqi Xu, 2009, I: Applied Physics Letters. 94, 4, 042114.

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  29. Multispectral guided fluorescence diffuse optical tomography using upconverting nanoparticles

    Pontus Svenmarker, Can Xu, Haichun Liu, Xia Wu & Stefan Andersson-Engels, 2014, I: Applied Physics Letters. 104, 7, 073703.

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  30. Laser spectroscopy of gas confined in nanoporous materials

    Tomas Svensson & Zhijian Shen, 2010, I: Applied Physics Letters. 96, 2, 021107.

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  31. Increased absorption in InAsSb nanowire clusters through coupled optical modes

    Johannes Svensson, Yang Chen, Nicklas Anttu, Mats Erik Pistol & Lars Erik Wernersson, 2017 feb 20, I: Applied Physics Letters. 110, 8, 081104.

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  32. Projecting picosecond lattice dynamics through x-ray topography

    Ola Synnergren, Michael Harbst, T Missalla, Jörgen Larsson, G Katona, R Neutze & R Wouts, 2002, I: Applied Physics Letters. 80, 20, s. 3727-3729

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  33. Coherent Phonon Control

    Ola Synnergren, Tue Hansen, Sophie Canton, Henrik Enquist, Peter Sondhauss, Alok Srivastava & Jörgen Larsson, 2007, I: Applied Physics Letters. 90, 171929.

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  34. Carbon nanotube bolometers

    M. Tarasov, J. Svensson, L. Kuzmin & E. E.B. Campbell, 2007 apr 30, I: Applied Physics Letters. 90, 16, 163503.

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  35. Image widening not only a question of tip sample convolution

    Jonas O. Tegenfeldt & Lars Montelius, 1995 dec 1, I: Applied Physics Letters. 1 s.

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  36. Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

    Claes Thelander, Philippe Caroff, Sebastien Plissard & Kimberly Dick Thelander, 2012, I: Applied Physics Letters. 100, 23

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  37. Single-electron transistors in heterostructure nanowires.

    Claes Thelander, Thomas Mårtensson, Mikael Björk, B J Ohlsson, Marcus Larsson, Reine Wallenberg & Lars Samuelson, 2003, I: Applied Physics Letters. 83, 10, s. 2052-2054

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  38. Gold nanoparticle single electron transistor with carbon nanotube leads

    Claes Thelander, Martin H. Magnusson, Knut Deppert, Lars Samuelson, Per Rugaard Poulsen, Jesper Nygård & Jørn Borggreen, 2001 sep 24, I: Applied Physics Letters. 79, 13, s. 2106-2108 3 s.

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  39. Interface composition of InAs nanowires with Al2O2 and HfO2 thin films

    Rainer Timm, Martin Hjort, Alexander Fian, Mattias Borg, Claes Thelander, Jesper N Andersen, Lars-Erik Wernersson & Anders Mikkelsen, 2011, I: Applied Physics Letters. 99, 22, s. 222907-1-222907-3

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  40. Radial tunnel diodes based on InP/InGaAs core-shell nanowires

    Ofogh Tizno, Bahram Ganjipour, Magnus Heurlin, Claes Thelander, Magnus T. Borgström & Lars Samuelson, 2017 mar 13, I: Applied Physics Letters. 110, 11, 113501.

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  41. Branched InAs nanowire growth by droplet confinement

    Marcus Tornberg, Kimberly A. Dick & Sebastian Lehmann, 2018 sep 20, I: Applied Physics Letters. 113, 12, 123104.

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  42. Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

    M. Tuominen, J. Lang, J. Dahl, M. Kuzmin, M. Yasir, J. Makela, Jacek Osiecki, Karina Schulte, M. P. J. Punkkinen, P. Laukkanen & K. Kokko, 2015, I: Applied Physics Letters. 106, 1, 011606.

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  43. Multi-MHz time-of-flight electronic bandstructure imaging of graphene on Ir(111)

    C. Tusche, P. Goslawski, D. Kutnyakhov, M. Ellguth, K. Medjanik, H. J. Elmers, S. Chernov, R. Wallauer, D. Engel, A. Jankowiak & G. Schönhense, 2016 jun 27, I: Applied Physics Letters. 108, 26, 261602.

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  44. Composition-dependent crystallization of alternative gate dielectrics.

    R B Van Dover, M L Green, L Manchanda, L F Schneemeyer & Theo Siegrist, 2003, I: Applied Physics Letters. 83, 7, s. 1459-1461

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  45. Hole doping of graphene supported on Ir(111) by AlBr3

    Nikolay Vinogradov, Konstantin Simonov, Alexei Zakharov, Justin Wells, A. V. Generalov, A. S. Vinogradov, N. Martensson & Alexei Preobrajenski, 2013, I: Applied Physics Letters. 102, 6, 061601.

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  46. Extraction-controlled quantum cascade lasers

    Andreas Wacker, 2010, I: Applied Physics Letters. 97, 8, 081105.

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  47. Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

    Jesper Wallentin, Laura Barrutia Poncela, Anna M. Jansson, Kilian Mergenthaler, Martin Ek, Daniel Jacobsson, Reine Wallenberg, Knut Deppert, Lars Samuelson, Dan Hessman & Magnus Borgström, 2012, I: Applied Physics Letters. 100, 25

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  48. Photoluminescence study of Zn-doped wurtzite InP core-shell nanowires

    Jesper Wallentin, Magnus Borgström, Lars Samuelson, Mitsuru Ekawa & Kenichi Kawaguchi, 2013, I: Applied Physics Letters. 102, 3, 032105.

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