Applied Physics Letters, 0003-6951

Tidskrift

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  1. ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

    Aein Shiri Babadi, Erik Lind & Lars Erik Wernersson, 2016 mar 28, I: Applied Physics Letters. 108, 13, 132904.

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  2. ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy

    E. Janik, Janusz Sadowski, P. Dluzewski, S. Kret, L. T. Baczewski, A. Petroutchik, E. Lusakowska, J. Wrobel, W. Zaleszczyk, G. Karczewski, T. Wojtowicz & A. Presz, 2006, I: Applied Physics Letters. 89, 13

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  3. X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires

    J. Eymery, V. Favre-Nicolin, Linus Fröberg & Lars Samuelson, 2009, I: Applied Physics Letters. 94, 13, 131911.

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  4. X-ray investigation of subsurface interstitial oxygen at Nb/oxide interfaces

    M. Delheusy, A. Stierle, N. Kasper, R. P. Kurta, A. Vlad, H. Dosch, C. Antoine, Andrea Resta, Edvin Lundgren & Jesper N Andersen, 2008, I: Applied Physics Letters. 92, 10, 101911.

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  5. X-ray induced demagnetization of single-molecule magnets

    Jan Dreiser, Rasmus Westerström, Cinthia Piamonteze, Frithjof Nolting, Stefano Rusponi, Harald Brune, Shangfeng Yang, Alexey Popov, Lothar Dunsch & Thomas Greber, 2014, I: Applied Physics Letters.

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  6. Upscaling of multi-beam x-ray ptychography for efficient x-ray microscopy with high resolution and large field of view

    Felix Wittwer, Mikhail Lyubomirskiy, Frieder Koch, Maik Kahnt, Martin Seyrich, Jan Garrevoet, Christian David & Christian G. Schroer, 2021, I: Applied Physics Letters. 118, 17, 6 s., 171102.

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  7. Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

    Aimin Song, M Missous, Pär Omling, AR Peaker, Lars Samuelson & Werner Seifert, 2003, I: Applied Physics Letters. 83, 9, s. 1881-1883

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  8. Ultraviolet prepulse for enhanced x-ray emission and brightness from droplet-target laser plasmas

    M Berglund, L Rymell & H. M Hertz, 1996, I: Applied Physics Letters. 69, 12, s. 1683-1685

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  9. Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

    P. Laukkanen, M. P. J. Punkkinen, J. Lang, M. Tuominen, M. Kuzmin, V. Tuominen, J. Dahl, Johan Adell, Janusz Sadowski, J. Kanski, V. Polojarvi, J. Pakarinen, K. Kokko, M. Guina, M. Pessa & I. J. Vayrynen, 2011, I: Applied Physics Letters. 98, 23, 231908.

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  10. Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

    E Forsen, G Abadal, Sara Ghatnekar-Nilsson, J Teva, J Verd, R Sandberg, W Svendsen, F Perez-Murano, J Esteve, E Figueras, F Campabadal, Lars Montelius, N Barniol & A Boisen, 2005, I: Applied Physics Letters. 87, 4, 043507.

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