Semiconductor Science and Technology, 0268-1242

Tidskrift

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  1. Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers

    Desrat, W., Kamara, S., Terki, F., Charar, S., Sadowski, J. & Maude, D. K., 2009, I : Semiconductor Science and Technology. 24, 6

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  2. Charge pumping in InAs nanowires by surface acoustic waves

    Roddaro, S., Strambini, E., Romeo, L., Piazza, V., Nilsson, K., Lars Samuelson & Beltram, F., 2010, I : Semiconductor Science and Technology. 25, 2, 024013.

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  3. Control of III-V nanowire crystal structure by growth parameter tuning

    Kimberly Dick Thelander, Caroff, P., Bolinsson, J., Maria Messing, Jonas Johansson, Knut Deppert, Reine Wallenberg & Lars Samuelson, 2010, I : Semiconductor Science and Technology. 25, 2, 024009.

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  4. Free carrier absorption and inter-subband transitions in imperfect heterostructures

    Ndebeka-Bandou, C., Carosella, F., Ferreira, R., Andreas Wacker & Bastard, G., 2014, I : Semiconductor Science and Technology. 29, 2, 023001.

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  5. High frequency III-V nanowire MOSFETs

    Erik Lind, 2016 aug 25, I : Semiconductor Science and Technology. 31, 9, 093005.

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  6. Magnetic order in semiconducting, ferromagnetic Ga1-xMnxAs

    Fedorych, OM., Wilamowski, Z., Potemski, M., Byszewski, M. & Sadowski, J., 2004, I : Semiconductor Science and Technology. 19, 4, s. S492-S493

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  7. Optical absorption of polarized light in InAs/GaSb quantum wells

    Zakharova, A., Semenikhin, I. & Chao, K-A., 2008, I : Semiconductor Science and Technology. 23, 12, 125044.

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  8. Phonon transmission in III-V semiconductor superlattices and alloys

    Antonyuk, V., Larsson, M., Mal'shukov, AG. & Chao, K-A., 2005, I : Semiconductor Science and Technology. 20, 5, s. 347-352

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  9. The effect of a material growth technique on ion-implanted Mn diffusion in GaAs

    Koskelo, O., Raisanen, J., Tuomisto, F. & Sadowski, J., 2009, I : Semiconductor Science and Technology. 24, 4

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  10. Thermoelectric performance of classical topological insulator nanowires

    Gooth, J., Gluschke, J-G., Zierold, R., Martin Leijnse, Heiner Linke & Nielsch, K., 2015, I : Semiconductor Science and Technology. 30, 1, 015015.

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  11. Transition to the quantum hall regime in InAs nanowire cross-junctions

    Gooth, J., Mattias Borg, Schmid, H., Bologna, N., Rossell, M. D., Wirths, S., Moselund, K. E., Nielsch, K. & Riel, H., 2019 feb 25, I : Semiconductor Science and Technology. 34, 035028.

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