Adam Jönsson

Doktorand
Fler filtreringsmöjligheter
  1. Artikel i vetenskaplig tidskrift
  2. Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si

    Adam Jönsson, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2020 aug 20, I: IEEE Transactions on Electron Devices. 67, 10, s. 4118-4122

    Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

  3. A Self-aligned Gate-last Process applied to All-III-V CMOS on Si

    Adam Jonsson, Johannes Svensson & Lars Erik Wernersson, 2018 jul, I: IEEE Electron Device Letters. 39, 7, s. 935-938

    Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

  4. Konferenspaper i proceeding
  5. Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si

    Adam Jönsson, Johannes Svensson & Lars-Erik Wernersson, 2019 jan 17, 2018 IEEE International Electron Devices Meeting (IEDM). IEEE - Institute of Electrical and Electronics Engineers Inc., s. 39.3.1-39.3.4

    Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

  6. Konferensabstract
  7. CMOS Integration Based on All-III-V Materials

    Adam Jönsson, Johannes Svensson & Lars-Erik Wernersson, 2018 mar 10.

    Forskningsoutput: KonferensbidragKonferensabstract