Erik Lind

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  1. 2020

  2. Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies

    Giulio D'Acunto, Andrea Troian, Esko Kokkonen, Foqia Rehman, Yen Po Liu, Sofie Yngman, Zhihua Yong, Sarah R. McKibbin, Tamires Gallo, Erik Lind, Joachim Schnadt & Rainer Timm, 2020 dec 22, I : ACS Applied Electronic Materials. 2, 12, s. 3915-3922 8 s.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  3. Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si

    Adam Jönsson, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2020 aug 20, I : IEEE Transactions on Electron Devices. 67, 10, s. 4118-4122

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  4. Mobility of near surface MOVPE grown InGaAs/InP quantum wells

    Lasse Södergren, Navya Sri Garigapati, Mattias Borg & Erik Lind, 2020 jul 6, I : Applied Physics Letters. 117, 1, 013102.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  6. Vertical nanowire III–V MOSFETs with improved high-frequency gain

    Olli-Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2020 apr, I : Electronics Letters. 56, 13, s. 669 - 671

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  7. Weyl Semi-Metal-Based High-Frequency Amplifiers

    A. Toniato, B. Gotsmann, E. Lind & C. B. Zota, 2020 feb 13, 2019 IEEE International Electron Devices Meeting, IEDM . Institute of Electrical and Electronics Engineers Inc., 8993575. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  9. High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm

    Olli Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, Axel R. Persson, Reine Wallenberg, Erik Lind & Lars Erik Wernersson, 2020, I : IEEE Electron Device Letters. 41, 8, s. 1161-1164 4 s., 9123921.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  12. 2019

  14. Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs

    Markus Hellenbrand, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2019 jul 2.

    Forskningsoutput: Konferensbidrag › Konferenspaper, ej i proceeding/ej förlagsutgivet

  18. 2018

  19. Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2018 jul, I : IEEE Electron Device Letters. 39, 7, s. 1089-1091

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  20. Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 jun 25, 2018 76th Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc., s. 137-138 2 s.

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  21. Fabrication of Tunnel Field-Effect Transistors

    Abinaya Krishnaraja, Elvedin Memisevic, Markus Hellenbrand, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2018 maj 24, (Unpublished).

    Forskningsoutput: Konferensbidrag › Konferenspaper, ej i proceeding/ej förlagsutgivet

  22. RF Characterisation of Vertical III-V Nanowire Tunnel FETs

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 maj 24, (Unpublished).

    Forskningsoutput: Konferensbidrag › Konferenspaper, ej i proceeding/ej förlagsutgivet

  23. Capacitance Measurements in Vertical III-V Nanowire TFETs

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 maj 4, I : IEEE Electron Device Letters. 39, 7, s. 943-946 4 s.

    Forskningsoutput: Tidskriftsbidrag › Letter

  24. A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs

    Seiko Netsu, Markus Hellenbrand, Cezar B. Zota, Yasuyuki Miyamoto & Erik Lind, 2018, I : IEEE Journal of the Electron Devices Society. 6, s. 408-412

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  25. Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2018, I : Nanotechnology. 29, 43, 435201.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  26. 2017

  27. Junctionless tri-gate InGaAs MOSFETs

    Cezar B. Zota, Mattias Borg, Lars Erik Wernersson & Erik Lind, 2017 dec 1, I : Japanese Journal of Applied Physics. 56, 12, 120306.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  28. InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 nov, I : IEEE Transactions on Electron Devices. 64, 11, s. 4746-4751

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  29. Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si

    Olli Pekka Kilpi, Johannes Svensson, Jun Wu, Axel R. Persson, Reine Wallenberg, Erik Lind & Lars Erik Wernersson, 2017 okt 11, I : Nano Letters. 17, 10, s. 6006-6010 5 s.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  30. Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 sep, 47th European Solid-State Device Research Conference (ESSDERC), 2017. IEEE - Institute of Electrical and Electronics Engineers Inc., s. 38-41 4 s.

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  31. First InGaAs lateral nanowire MOSFET RF noise measurements and model

    Lars Ohlsson, Fredrik Lindelow, Cezar B. Zota, Matthias Ohlrogge, Thomas Merkle, Lars Erik Wernersson & Erik Lind, 2017 aug 1, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999451

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  32. Record performance for junctionless transistors in InGaAs MOSFETs

    Cezar B. Zota, Mattias Borg, Lars Erik Wernersson & Erik Lind, 2017 jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., s. T34-T35 7998190

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  33. Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v

    Olli Pekka Kilpi, Jun Wu, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2017 jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., s. T36-T37 7998191

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  34. 1/f and RTS Noise in InGaAs Nanowire MOSFETs

    Christian Möhle, Cezar Zota, Markus Hellenbrand & Erik Lind, 2017 jun 28.

    Forskningsoutput: Konferensbidrag › Konferenspaper, ej i proceeding/ej förlagsutgivet

  35. 1/f and RTS noise in InGaAs nanowire MOSFETs

    C. Möhle, C. B. Zota, M. Hellenbrand & E. Lind, 2017 jun 25, I : Microelectronic Engineering. 178, s. 52-55

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  36. Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

    Elvedin Memisevic, Markus Hellenbrand, Erik Lind, Axel Persson, Saurabh Sant, Andreas Schenk, Johannes Svensson, Reine Wallenberg & Lars-Erik Wernersson, 2017 jun 14, I : Nano Letters.

    Forskningsoutput: Tidskriftsbidrag › Letter

  37. Gated Hall effect measurements on selectively grown InGaAs nanowires

    F. Lindelöw, C. B. Zota & E. Lind, 2017 apr 25, I : Nanotechnology. 28, 20, 205204.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  38. InGaAs tri-gate MOSFETs with record on-current

    Cezar B. Zota, Fredrik Lindelow, Lars Erik Wernersson & Erik Lind, 2017 jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., s. 3.2.1-3.2.4 7838336

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  39. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V

    E. Memisevic, J. Svensson, M. Hellenbrand, E. Lind & L. E. Wernersson, 2017 jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., s. 19.1.1-19.1.4 7838450

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  40. Impact of doping and diameter on the electrical properties of GaSb nanowires

    Aein S. Babadi, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2017 jan 30, I : Applied Physics Letters. 110, 5, 053502.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  42. Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017, (Unpublished).

    Forskningsoutput: Konferensbidrag › Konferenspaper, ej i proceeding/ej förlagsutgivet

  43. 2016

  44. High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

    C. B. Zota, F. Lindelöw, L. E. Wernersson & E. Lind, 2016 okt 27, I : Electronics Letters. 52, 22, s. 1869-1871 3 s.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  45. High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

    Cezar B. Zota, Lars Erik Wernersson & Erik Lind, 2016 okt 1, I : IEEE Electron Device Letters. 37, 10, s. 1264-1267 4 s., 7552490.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  46. InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

    Elvedin Memisevic, J. Svensson, E. Lind & L. E. Wernersson, 2016 sep 27, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., s. 154-155 2 s. 7578029

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  47. InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v

    Cezar B. Zota, Fredrik Lindelöw, Lars Erik Wernersson & Erik Lind, 2016 sep 21, 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 7573418

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  48. High frequency III-V nanowire MOSFETs

    Erik Lind, 2016 aug 25, I : Semiconductor Science and Technology. 31, 9, 093005.

    Forskningsoutput: Tidskriftsbidrag › Översiktsartikel

  50. Size-effects in indium gallium arsenide nanowire field-effect transistors

    Cezar B. Zota & E. Lind, 2016 aug 8, I : Applied Physics Letters. 109, 6, 063505.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  51. Amplifier Design Using Vertical InAs Nanowire MOSFETs

    Kristofer Jansson, Erik Lind & Lars Erik Wernersson, 2016 jun 1, I : IEEE Transactions on Electron Devices. 63, 6, s. 2353-2359 7 s., 7465782.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  52. Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric

    Guntrade Roll, Jiongjiong Mo, Erik Lind, Sofia Johansson & Lars Erik Wernersson, 2016 jun 1, I : IEEE Transactions on Device and Materials Reliability. 16, 2, s. 112-116 5 s., 7422103.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  54. Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions

    Jun Wu, Aein Shiri Babadi, Daniel Jacobsson, Jovana Colvin, Sofie Yngman, Rainer Timm, Erik Lind & Lars Erik Wernersson, 2016 apr 13, I : Nano Letters. 16, 4, s. 2418-2425 8 s.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  55. ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

    Aein Shiri Babadi, Erik Lind & Lars Erik Wernersson, 2016 mar 28, I : Applied Physics Letters. 108, 13, 132904.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

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Erik Lind

Professor,

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