Erik Lind

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  1. 2021
  3. 2020

  4. Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies

    Giulio D'Acunto, Andrea Troian, Esko Kokkonen, Foqia Rehman, Yen Po Liu, Sofie Yngman, Zhihua Yong, Sarah R. McKibbin, Tamires Gallo, Erik Lind, Joachim Schnadt & Rainer Timm, 2020 dec 22, I: ACS Applied Electronic Materials. 2, 12, s. 3915-3922 8 s.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  5. Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si

    Adam Jönsson, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2020 aug 20, I: IEEE Transactions on Electron Devices. 67, 10, s. 4118-4122

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  6. Mobility of near surface MOVPE grown InGaAs/InP quantum wells

    Lasse Södergren, Navya Sri Garigapati, Mattias Borg & Erik Lind, 2020 jul 6, I: Applied Physics Letters. 117, 1, 013102.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  7. III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications

    Fredrik Lindelöw, Navya Sri Garigapati, Lasse Södergren, Mattias Borg & Erik Lind, 2020 jun 1, I: Semiconductor Science and Technology. 35, 6, 065015.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  8. Vertical nanowire III–V MOSFETs with improved high-frequency gain

    Olli-Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2020 apr, I: Electronics Letters. 56, 13, s. 669 - 671

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  9. Weyl Semi-Metal-Based High-Frequency Amplifiers

    A. Toniato, B. Gotsmann, E. Lind & C. B. Zota, 2020 feb 13, 2019 IEEE International Electron Devices Meeting, IEDM . Institute of Electrical and Electronics Engineers Inc., 8993575. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  10. Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs

    Markus Hellenbrand, Erik Lind, Olli-Pekka Kilpi & Lars-Erik Wernersson, 2020, I: Solid-State Electronics. 171, 107840.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  11. High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm

    Olli Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, Axel R. Persson, Reine Wallenberg, Erik Lind & Lars Erik Wernersson, 2020, I: IEEE Electron Device Letters. 41, 8, s. 1161-1164 4 s., 9123921.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  14. 2019

  16. Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs

    Markus Hellenbrand, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2019 jul 2.

    Forskningsoutput: Konferensbidrag › Konferenspaper, ej i proceeding/ej förlagsutgivet

  18. Low-Frequency Noise in Nanowire and Planar III-V MOSFETs

    Markus Hellenbrand, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2019 maj 18, I: Microelectronic Engineering. 110986.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  19. Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs

    Olli Pekka Kilpi, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2019, I: IEEE Journal of the Electron Devices Society. 7, s. 70-75

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  20. 2018

  21. Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2018 jul, I: IEEE Electron Device Letters. 39, 7, s. 1089-1091

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  22. Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 jun 25, 2018 76th Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc., s. 137-138 2 s.

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  23. Fabrication of Tunnel Field-Effect Transistors

    Abinaya Krishnaraja, Elvedin Memisevic, Markus Hellenbrand, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2018 maj 24, (Unpublished).

    Forskningsoutput: Konferensbidrag › Konferenspaper, ej i proceeding/ej förlagsutgivet

  24. RF Characterisation of Vertical III-V Nanowire Tunnel FETs

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 maj 24, (Unpublished).

    Forskningsoutput: Konferensbidrag › Konferenspaper, ej i proceeding/ej förlagsutgivet

  25. Capacitance Measurements in Vertical III-V Nanowire TFETs

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 maj 4, I: IEEE Electron Device Letters. 39, 7, s. 943-946 4 s.

    Forskningsoutput: Tidskriftsbidrag › Letter

  26. A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs

    Seiko Netsu, Markus Hellenbrand, Cezar B. Zota, Yasuyuki Miyamoto & Erik Lind, 2018, I: IEEE Journal of the Electron Devices Society. 6, s. 408-412

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  27. Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2018, I: Nanotechnology. 29, 43, 435201.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  28. 2017

  29. Junctionless tri-gate InGaAs MOSFETs

    Cezar B. Zota, Mattias Borg, Lars Erik Wernersson & Erik Lind, 2017 dec 1, I: Japanese Journal of Applied Physics. 56, 12, 120306.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  30. InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 nov, I: IEEE Transactions on Electron Devices. 64, 11, s. 4746-4751

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  31. Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si

    Olli Pekka Kilpi, Johannes Svensson, Jun Wu, Axel R. Persson, Reine Wallenberg, Erik Lind & Lars Erik Wernersson, 2017 okt 11, I: Nano Letters. 17, 10, s. 6006-6010 5 s.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  32. Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 sep, 47th European Solid-State Device Research Conference (ESSDERC), 2017. IEEE - Institute of Electrical and Electronics Engineers Inc., s. 38-41 4 s.

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  33. First InGaAs lateral nanowire MOSFET RF noise measurements and model

    Lars Ohlsson, Fredrik Lindelow, Cezar B. Zota, Matthias Ohlrogge, Thomas Merkle, Lars Erik Wernersson & Erik Lind, 2017 aug 1, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999451

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  34. Record performance for junctionless transistors in InGaAs MOSFETs

    Cezar B. Zota, Mattias Borg, Lars Erik Wernersson & Erik Lind, 2017 jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., s. T34-T35 7998190

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  35. Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v

    Olli Pekka Kilpi, Jun Wu, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2017 jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., s. T36-T37 7998191

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  36. 1/f and RTS Noise in InGaAs Nanowire MOSFETs

    Christian Möhle, Cezar Zota, Markus Hellenbrand & Erik Lind, 2017 jun 28.

    Forskningsoutput: Konferensbidrag › Konferenspaper, ej i proceeding/ej förlagsutgivet

  37. 1/f and RTS noise in InGaAs nanowire MOSFETs

    C. Möhle, C. B. Zota, M. Hellenbrand & E. Lind, 2017 jun 25, I: Microelectronic Engineering. 178, s. 52-55

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  38. Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

    Elvedin Memisevic, Markus Hellenbrand, Erik Lind, Axel Persson, Saurabh Sant, Andreas Schenk, Johannes Svensson, Reine Wallenberg & Lars-Erik Wernersson, 2017 jun 14, I: Nano Letters.

    Forskningsoutput: Tidskriftsbidrag › Letter

  39. Gated Hall effect measurements on selectively grown InGaAs nanowires

    F. Lindelöw, C. B. Zota & E. Lind, 2017 apr 25, I: Nanotechnology. 28, 20, 205204.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  40. InGaAs tri-gate MOSFETs with record on-current

    Cezar B. Zota, Fredrik Lindelow, Lars Erik Wernersson & Erik Lind, 2017 jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., s. 3.2.1-3.2.4 7838336

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  41. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V

    E. Memisevic, J. Svensson, M. Hellenbrand, E. Lind & L. E. Wernersson, 2017 jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., s. 19.1.1-19.1.4 7838450

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  42. Impact of doping and diameter on the electrical properties of GaSb nanowires

    Aein S. Babadi, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2017 jan 30, I: Applied Physics Letters. 110, 5, 053502.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  43. Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

    Elvedin Memisevic, Erik Lind, Markus Hellenbrand, Johannes Svensson & Lars-Erik Wernersson, 2017, I: IEEE Electron Device Letters. s. 1661 - 1664

    Forskningsoutput: Tidskriftsbidrag › Letter

  44. Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017, (Unpublished).

    Forskningsoutput: Konferensbidrag › Konferenspaper, ej i proceeding/ej förlagsutgivet

  45. 2016

  46. High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

    C. B. Zota, F. Lindelöw, L. E. Wernersson & E. Lind, 2016 okt 27, I: Electronics Letters. 52, 22, s. 1869-1871 3 s.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  47. High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

    Cezar B. Zota, Lars Erik Wernersson & Erik Lind, 2016 okt 1, I: IEEE Electron Device Letters. 37, 10, s. 1264-1267 4 s., 7552490.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  48. InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

    Elvedin Memisevic, J. Svensson, E. Lind & L. E. Wernersson, 2016 sep 27, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., s. 154-155 2 s. 7578029

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  49. InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v

    Cezar B. Zota, Fredrik Lindelöw, Lars Erik Wernersson & Erik Lind, 2016 sep 21, 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 7573418

    Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding

  50. High frequency III-V nanowire MOSFETs

    Erik Lind, 2016 aug 25, I: Semiconductor Science and Technology. 31, 9, 093005.

    Forskningsoutput: Tidskriftsbidrag › Översiktsartikel

  51. Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si

    Martin Berg, Olli-Pekka Kilpi, Karl-Magnus Persson, Johannes Svensson, Markus Hellenbrand, Erik Lind & Lars-Erik Wernersson, 2016 aug 8, I: IEEE Electron Device Letters. 37, 8, s. 966 - 969 4 s.

    Forskningsoutput: Tidskriftsbidrag › Letter

  52. Size-effects in indium gallium arsenide nanowire field-effect transistors

    Cezar B. Zota & E. Lind, 2016 aug 8, I: Applied Physics Letters. 109, 6, 063505.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  53. Amplifier Design Using Vertical InAs Nanowire MOSFETs

    Kristofer Jansson, Erik Lind & Lars Erik Wernersson, 2016 jun 1, I: IEEE Transactions on Electron Devices. 63, 6, s. 2353-2359 7 s., 7465782.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  54. Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric

    Guntrade Roll, Jiongjiong Mo, Erik Lind, Sofia Johansson & Lars Erik Wernersson, 2016 jun 1, I: IEEE Transactions on Device and Materials Reliability. 16, 2, s. 112-116 5 s., 7422103.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

  55. Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

    Elvedin Memisevic, Johannes Svensson, Markus Hellenbrand, Erik Lind & Lars-Erik Wernersson, 2016 maj 5, I: IEEE Electron Device Letters. 37, 5, s. 549 - 552

    Forskningsoutput: Tidskriftsbidrag › Letter

  56. Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions

    Jun Wu, Aein Shiri Babadi, Daniel Jacobsson, Jovana Colvin, Sofie Yngman, Rainer Timm, Erik Lind & Lars Erik Wernersson, 2016 apr 13, I: Nano Letters. 16, 4, s. 2418-2425 8 s.

    Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

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Erik Lind

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