Markus Hellenbrand

Doktorand, Fysik masterexamen, ,
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  1. 2019
  2. Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs

    Markus Hellenbrand, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2019 jul 2.

    Forskningsoutput: KonferensbidragKonferenspaper, ej i proceeding/ej förlagsutgivet

  3. 2018
  4. Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 jun 25, 2018 76th Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc., s. 137-138 2 s.

    Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

  5. Fabrication of Tunnel Field-Effect Transistors

    Abinaya Krishnaraja, Memisevic, E., Markus Hellenbrand, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2018 maj 24, (Unpublished).

    Forskningsoutput: KonferensbidragKonferenspaper, ej i proceeding/ej förlagsutgivet

  6. RF Characterisation of Vertical III-V Nanowire Tunnel FETs

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 maj 24, (Unpublished).

    Forskningsoutput: KonferensbidragKonferenspaper, ej i proceeding/ej förlagsutgivet

  7. A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs

    Netsu, S., Markus Hellenbrand, Zota, C. B., Miyamoto, Y. & Erik Lind, 2018, I : IEEE Journal of the Electron Devices Society. 6, s. 408-412

    Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

  8. 2017
  9. Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 sep, 47th European Solid-State Device Research Conference (ESSDERC), 2017. IEEE - Institute of Electrical and Electronics Engineers Inc., s. 38-41 4 s.

    Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

  10. 1/f and RTS Noise in InGaAs Nanowire MOSFETs

    Möhle, C., Zota, C., Markus Hellenbrand & Erik Lind, 2017 jun 28.

    Forskningsoutput: KonferensbidragKonferenspaper, ej i proceeding/ej förlagsutgivet

  11. 1/f and RTS noise in InGaAs nanowire MOSFETs

    Möhle, C., Zota, C. B., M. Hellenbrand & E. Lind, 2017 jun 25, I : Microelectronic Engineering. 178, s. 52-55

    Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

  12. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V

    Memisevic, E., J. Svensson, M. Hellenbrand, E. Lind & L. E. Wernersson, 2017 jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., s. 19.1.1-19.1.4 7838450

    Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

  13. 2016