Integration of III-V semiconductor on Si by Rapid Melt Growth
The dissertation work aims to develop and utilize a new materials platform consisting of horizontal III-V semiconductor nano- and microstructures on Si/insulator substrates as well as on 2D materials. The integration technique in focus here is the Rapid Melt Epitaxial Growth. In this technique, amorphous III-V material are deposited, patterned with a small contact point with the Si substrate (the seed area), capped with appropriate material and then melted. The material recrystallizes in an epitaxial manner from the seed area which results in high quality of the material. The RMG growth on InSb, InAs and InGaAs will be studied during the research. The work will also involve development of RMG technique of III-V semiconductor material on 2D substrates such as WS2, MoS2, graphene and hexagonal boron nitride.
- Lunds universitet (ansvarig)
- School of Engineering, University of Glasgow, Scotland