1 volt CMOS Bluetooth front-end

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Abstract

A fully integrated 1 V CMOS Bluetooth front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5 mW, the noise figure is 5 dB, the conversion gain is 14 dB, the CP<sub>1</sub> is -16 dBm, and the IIP<sub>3</sub> is -5 dBm. The front-end is implemented in a standard 0.25 μm-CMOS technology

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Elektroteknik och elektronik

Nyckelord

Originalspråkengelska
Titel på värdpublikationESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
FörlagUniv. Bologna
Sidor795-798
ISBN (tryckt)88-900847-9-0
StatusPublished - 2002
PublikationskategoriForskning
Peer review utfördJa
EvenemangESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference - Firenze, Italien
Varaktighet: 2002 sep 242002 sep 26

Konferens

KonferensESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
LandItalien
OrtFirenze
Period2002/09/242002/09/26