1 volt CMOS Bluetooth front-end

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Standard

1 volt CMOS Bluetooth front-end. / Tillman, Fred; Sjöland, Henrik.

ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference. Univ. Bologna, 2002. s. 795-798.

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Harvard

Tillman, F & Sjöland, H 2002, 1 volt CMOS Bluetooth front-end. i ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference. Univ. Bologna, s. 795-798, ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference, Firenze, Italien, 2002/09/24.

APA

Tillman, F., & Sjöland, H. (2002). 1 volt CMOS Bluetooth front-end. I ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference (s. 795-798). Univ. Bologna.

CBE

Tillman F, Sjöland H. 2002. 1 volt CMOS Bluetooth front-end. I ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference. Univ. Bologna. s. 795-798.

MLA

Tillman, Fred och Henrik Sjöland "1 volt CMOS Bluetooth front-end". ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference. Univ. Bologna. 2002, 795-798.

Vancouver

Tillman F, Sjöland H. 1 volt CMOS Bluetooth front-end. I ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference. Univ. Bologna. 2002. s. 795-798

Author

Tillman, Fred ; Sjöland, Henrik. / 1 volt CMOS Bluetooth front-end. ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference. Univ. Bologna, 2002. s. 795-798

RIS

TY - GEN

T1 - 1 volt CMOS Bluetooth front-end

AU - Tillman, Fred

AU - Sjöland, Henrik

PY - 2002

Y1 - 2002

N2 - A fully integrated 1 V CMOS Bluetooth front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5 mW, the noise figure is 5 dB, the conversion gain is 14 dB, the CP1 is -16 dBm, and the IIP3 is -5 dBm. The front-end is implemented in a standard 0.25 μm-CMOS technology

AB - A fully integrated 1 V CMOS Bluetooth front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5 mW, the noise figure is 5 dB, the conversion gain is 14 dB, the CP1 is -16 dBm, and the IIP3 is -5 dBm. The front-end is implemented in a standard 0.25 μm-CMOS technology

KW - conversion gain

KW - power consumption

KW - topology robustness

KW - measurement correlation

KW - input matching

KW - maximum signal headroom

KW - Bluetooth specification 1.0B

KW - passive mixer

KW - common-gate LNA

KW - CMOS Bluetooth front-end

KW - low IF device

KW - noise figure

KW - Bluetooth receiver

KW - 1 V

KW - 2.5 mW

KW - 5 dB

KW - 14 dB

KW - 0.25 micron

M3 - Paper in conference proceeding

SN - 88-900847-9-0

SP - 795

EP - 798

BT - ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference

PB - Univ. Bologna

T2 - ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference

Y2 - 24 September 2002 through 26 September 2002

ER -