11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler

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Bibtex

@article{9fef0320ed804a6bb3d7df555947c3bd,
title = "11{\%} efficiency 100GHz InP-based heterostructure barrier varactor quintupler",
abstract = "A record conversion efficiency of 11.4{\%} at 100 GHz using a heretostructure barrier varactor (HBV) quintuplet is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-Nvaveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate.",
author = "Tomas Bryllert and Olsen, {A O} and J Vukusic and Emadi, {T A} and M Ingvarson and J Stake and D Lippens",
year = "2005",
doi = "10.1049/el:20057633",
language = "English",
volume = "41",
pages = "131--132",
journal = "Electronics Letters",
issn = "1350-911X",
publisher = "IEE",
number = "3",

}