11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler

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11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler. / Bryllert, Tomas; Olsen, A O; Vukusic, J; Emadi, T A; Ingvarson, M; Stake, J; Lippens, D.

I: Electronics Letters, Vol. 41, Nr. 3, 2005, s. 131-132.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

Bryllert, T, Olsen, AO, Vukusic, J, Emadi, TA, Ingvarson, M, Stake, J & Lippens, D 2005, '11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler', Electronics Letters, vol. 41, nr. 3, s. 131-132. https://doi.org/10.1049/el:20057633

APA

Bryllert, T., Olsen, A. O., Vukusic, J., Emadi, T. A., Ingvarson, M., Stake, J., & Lippens, D. (2005). 11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler. Electronics Letters, 41(3), 131-132. https://doi.org/10.1049/el:20057633

CBE

Bryllert T, Olsen AO, Vukusic J, Emadi TA, Ingvarson M, Stake J, Lippens D. 2005. 11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler. Electronics Letters. 41(3):131-132. https://doi.org/10.1049/el:20057633

MLA

Vancouver

Bryllert T, Olsen AO, Vukusic J, Emadi TA, Ingvarson M, Stake J et al. 11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler. Electronics Letters. 2005;41(3):131-132. https://doi.org/10.1049/el:20057633

Author

Bryllert, Tomas ; Olsen, A O ; Vukusic, J ; Emadi, T A ; Ingvarson, M ; Stake, J ; Lippens, D. / 11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler. I: Electronics Letters. 2005 ; Vol. 41, Nr. 3. s. 131-132.

RIS

TY - JOUR

T1 - 11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler

AU - Bryllert, Tomas

AU - Olsen, A O

AU - Vukusic, J

AU - Emadi, T A

AU - Ingvarson, M

AU - Stake, J

AU - Lippens, D

PY - 2005

Y1 - 2005

N2 - A record conversion efficiency of 11.4% at 100 GHz using a heretostructure barrier varactor (HBV) quintuplet is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-Nvaveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate.

AB - A record conversion efficiency of 11.4% at 100 GHz using a heretostructure barrier varactor (HBV) quintuplet is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-Nvaveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate.

U2 - 10.1049/el:20057633

DO - 10.1049/el:20057633

M3 - Article

VL - 41

SP - 131

EP - 132

JO - Electronics Letters

JF - Electronics Letters

SN - 1350-911X

IS - 3

ER -