1/f and RTS noise in InGaAs nanowire MOSFETs

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Abstract

Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.

Detaljer

Författare
Enheter & grupper
Externa organisationer
  • Lund University
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik

Nyckelord

Originalspråkengelska
Sidor (från-till)52-55
TidskriftMicroelectronic Engineering
Volym178
StatusPublished - 2017 jun 25
PublikationskategoriForskning
Peer review utfördJa
EvenemangConference on Insulating Films on Semiconductors (INFOS) - Potsdam, Tyskland
Varaktighet: 2017 jun 272017 jun 30

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